Silicon carbide semiconductor substrate and silicon carbide semiconductor device
作者： Uehigashi Hideyuki
DOI:
关键词: Semiconductor device 、 Conductivity 、 Specific resistance 、 Doping 、 Materials science 、 Substrate (electronics) 、 Impurity 、 Optoelectronics 、 Silicon carbide
摘要: A silicon carbide semiconductor substrate includes a first conductivity type doped with impurity to have and having specific resistance of 30 mΩcm or less. lifetime minority carriers in the is set 100 nsec
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