Nitride Semiconductor Element and Method of Manufacturing the Same
作者： Naoki Kaneda , Tomonobu Tsuchiya , Kazuhiro Mochizuki , Tomoyoshi Mishima , Tadayoshi Tsuchiya
DOI:
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摘要: A nitride semiconductor element having a high reverse breakdown voltage and method of manufacturing the same are provided. diode (a vertical-type SBD) has an n − -type layer drift region) formed on n-type substrate, p-type layer, besides, anode electrode layer. The relatively-thin first portion relatively-thick second provided so as to surround being in contact with outer circumference portion. Also, is thinner than be depleted. forms guard ring part.
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