作者: A. Kurowski , J.W. Schultze , H. Lüth , M.J. Schöning
DOI: 10.1016/S0925-4005(01)01054-1
关键词: Deposition (phase transition) 、 Hybrid silicon laser 、 Novel technique 、 Substrate (electronics) 、 Materials science 、 Fabrication 、 Porous silicon 、 Nanotechnology 、 Microstructure 、 Silicon
摘要: In this contribution, the authors present a novel technique to prepare new three-dimensional porous silicon layers. The base material is n-type Si with thickness of 60 μm. preparation microstructures an one-step process. Hence, it should be possible adopt in up-to-date sensor fabrication processes enhance properties sensors. As Jeske et al. [Surf. Interface Anal. 22 (1994) 363.] showed, p-type can also utilised as substrate for formation layers filled up sensing components. upcoming experiments tried tailor process substrates. First deposition Ni-P were carried out characterize deposits on samples.