作者: M. Jeske , K. G. Jung , J. W. Schultze , M. Thönissen , H. Münder
关键词: Porous medium 、 Silicon 、 Sputtering 、 X-ray photoelectron spectroscopy 、 Materials science 、 Porous silicon 、 Polymer 、 Chemical engineering 、 Anodizing 、 Analytical chemistry 、 Electrochemistry
摘要: The effect of electrochemical modifications like anodic oxidation, polymer deposition and electrodeposition Cu Ni on porous silicon are investigated with XPS sputter depth profiling. It is shown that after the oxidation small amounts Si 0 o remain in layer. polymers as well metals takes place not only at surface, but also layer