XPS investigations of electrochemically modified porous silicon layers

作者: M. Jeske , K. G. Jung , J. W. Schultze , M. Thönissen , H. Münder

DOI: 10.1002/SIA.740220179

关键词: Porous mediumSiliconSputteringX-ray photoelectron spectroscopyMaterials sciencePorous siliconPolymerChemical engineeringAnodizingAnalytical chemistryElectrochemistry

摘要: The effect of electrochemical modifications like anodic oxidation, polymer deposition and electrodeposition Cu Ni on porous silicon are investigated with XPS sputter depth profiling. It is shown that after the oxidation small amounts Si 0 o remain in layer. polymers as well metals takes place not only at surface, but also layer

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