Electrical contact to porous silicon by electrodeposition of iron
作者： F Ronkel , J.W Schultze , R Arens-Fischer
DOI: 10.1016/0040-6090(95)08045-7
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摘要: Electrodeposition of iron into porous n-type silicon (n-PS) was investigated. The electrodeposition performed potentiostatically as well potentiodynamically. Current efficiency proved by anodic dissolution. deposition is only possible after removal the oxide layer, which covers surface and pore walls n-PS. deposit studied with X-ray photoelectron spectroscopy sputter depth profiling.
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