Method of fabricating a self-aligned DMOS transistor device using SiC and spacers
作者： William A. Hennessy , James W. Kretchmer , Mario Ghezzo , Tat-Sing P. Chow , Richard J. Saia
DOI:
关键词: Materials science 、 Semiconductor 、 Gate oxide 、 Semiconductor device 、 Optoelectronics 、 Silicon nitride 、 Layer (electronics) 、 Transistor 、 Electrode 、 Silicon carbide
摘要: A method for fabricating a semiconductor device includes patterning refractory dielectric layer over of first conductivity type; conformally depositing spacer the patterned and layer; to leave adjacent an edge implanting ions second type form base region in spacer; source region; removing spacers; applying gate insulator at least portion electrode layer. Preferably step electrically conductive having same thickness as combined width spacers. In one embodiment silicon carbide, dioxide, spacers include nitride, polysilicon.
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