Self-aligned process for fabricating power MOSFET with spacer-shaped terraced gate
作者： Jun Zeng
DOI:
关键词: Time-dependent gate oxide breakdown 、 Power MOSFET 、 Gate oxide 、 Oxide 、 Optoelectronics 、 Materials science 、 Substrate (electronics) 、 Layer (electronics) 、 Metal gate 、 Polysilicon depletion effect
摘要: A process forms a power semiconductor device with reduced input capacitance and improved switching speed. substrate an epitaxial has oxide layer patterned to form narrow terraced gate. gate is formed on the upper surface of layer. polysilicon deposited region The anisotropically etched spacers abutting each two side surfaces region. p-type dopant implanted through driven in P-well regions source mask n-type spacers. It N+ regions.
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