Controlling diffusion in doped semiconductor regions
作者： Paul A. Farrar , Jerome M. Eldridge
DOI:
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摘要: A method and device for reducing a dopant diffusion rate in doped semiconductor region is provided. The methods devices include selecting plurality of impurity elements, including at least one element. Selection elements includes first element with atomic radius larger than an average host matrix second smaller radius. further amounts each the wherein radii complement other to reduce lattice strain.
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