Preparation of monoclinic Cu2SnS3 thin films by fine channel mist chemical vapor deposition method
作者： Kunihiko Tanaka , Mao Kowata , Fumitaka Yoshihisa , Shinya Imai , Wataru Yamazaki
DOI: 10.1016/J.TSF.2020.137820
关键词: Mist 、 Analytical chemistry 、 Materials science 、 Dissolution 、 Diffraction 、 Deposition (phase transition) 、 Thin film 、 Chemical vapor deposition 、 Solvent 、 Monoclinic crystal system
摘要: Abstract In this research, rare metal-free Cu2SnS3 (CTS) thin films were fabricated by the fine channel mist chemical vapor deposition (CVD) method, which does not require a vacuum apparatus. The solution was prepared dissolving SnCl4 and CuCl2 in pure water (solvent). To obtain Cu-Sn (CT) precursor CVD sprayed on alkali-free glass (Eagle) substrates heated at 390 °C. CT then sulfur-containing atmosphere (H2S (3%) + N2) to CTS films. X-ray diffraction patterns of samples showed characteristic (200), (131), (−131), (−333) peaks monoclinic CTS. Raman scattering spectra vicinity 292, 313, 353, 372 cm−1, attributed These results that method prepared.
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