Structural, optical and transport properties of SxZnO
作者： K. Dib , R. Brahimi , Y. Bessekhouad , N. Tayebi , M. Trari
DOI: 10.1016/J.MSSP.2016.03.010
关键词: Band gap 、 Conductivity 、 Crystallization 、 Homogeneous distribution 、 Nanotechnology 、 Materials science 、 Crystallite 、 Polaron 、 Charge carrier 、 Doping 、 Analytical chemistry
摘要: Abstract In this paper, S-doped ZnO (SxZnO) was prepared using sol-gel method at different S amounts. The structural, optical and transport properties were investigated. introduction of atoms into the network found to lower crystallization level which results in reducing crystallite size up x=0.3. doping process is confirmed by observed peak ~610 cm−1 ATR spectrum related Zn-S linking. EDX mapping shows a homogeneous distribution on particles surface. best compromise between band gap (Eg=2.96 eV), charge carriers (NA=2.139×1022 cm−3), conductivity (σ=5.56×10−4 Ω−1 m−1) mobility (µ=16.26×10−14 m2 V−1 s−1) obtained for x=0.1. conduction mechanism assumed small hopping polaron. S-doping has impacted positively photocatalytic activity ZnO, with particularly high performance S0.2ZnO.
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