Influence of intrinsic defects on the electrical and optical properties of TiO 2 :Nb films sputtered at room temperature

摘要: Abstract Oxide-based films and nanostructures have emerged as important materials for a wide range of applications such photovoltaics, optoelectronics, gas sensing electronics. To develop an appropriate understanding the properties these oxides, it is necessary to address material preparation methods defect probing issues. This work reports on synthesis processes TiO 2 based transparent conductive films, their stoichiometry control identifying, in relation with electrical optical properties. Un-doped :Nb were deposited by RF co-sputtering from Nb O 5 targets Ar plasma. The chemical species present plasmas used deposition process investigated emission spectroscopy, which was later correlated defects structure films. Analysis X-ray photoelectron spectroscopy shed more light nature vacancies effect latter In terms results, we measured resistivity 10 − 2 –10 − 3  Ω cm intrinsically extrinsically doped (films oxygen + 5 respectively) while lowest obtained intrinsically-extrinsically co-doped (7.4 × 10 − 4  Ω cm). transparency also actively determined lattice highly (65–85% visible range) controlling density defects. approach adopted this generation could be useful other oxide-based where vacancies-dependent are crucial, room temperature ferromagnetism photocatalytic applications.