Nanoscale Free-Carrier Profiling of Individual Semiconductor Nanowires by Infrared Near-Field Nanoscopy
作者： J. M. Stiegler , A. J. Huber , S. L. Diedenhofen , J. Gómez Rivas , R. E. Algra
DOI: 10.1021/NL100145D
关键词: Heterojunction 、 Infrared 、 Materials science 、 Nanostructure 、 Semiconductor 、 Nanotechnology 、 Near-field scanning optical microscope 、 Nanowire 、 Plasmon 、 Doping
摘要: We report quantitative, noninvasive and nanoscale-resolved mapping of the free-carrier distribution in InP nanowires with doping modulation along axial radial directions, by employing infrared near-field nanoscopy. Owing to technique's capability subsurface probing, we provide direct experimental evidence that dopants interior nanowire shells effectively contribute local concentration. The high sensitivity s-SNOM also allows us directly visualize nanoscale variations concentration wires as thin 20 nm, which attribute growth defects. Our results open interesting avenues for studying conductivity complex heterostructures, could be further enhanced nanotomography.
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