作者: Su Jeong Lee , Jieun Ko , Jee Ho Park , Jung Han Kim , Gee Sung Chae
DOI: 10.1039/C5TC01481F
关键词: Nanotechnology 、 Electrode 、 Contact resistance 、 Ohmic contact 、 Active layer 、 Materials science 、 Carbon nanotube 、 Work function 、 Field effect 、 Optoelectronics 、 Thin-film transistor
摘要: Work function modulation of electrode materials is a crucial factor for achieving superior performance in transparent and flexible device applications. In this work, aluminum-doped zinc-oxide nanoparticles (AZO NPs) with low work were introduced single-walled carbon nanotube (SWCNT) electrodes to achieve an Ohmic contact indium-oxide (In2O3) active layer. These SWCNT–AZO NP hybrid exhibited resistance the solution-processed In2O3 layer, due AZO NPs physisorbed on SWCNTs. The 50 nm thick films showed considerably electrical 214.5 Ω sq−1, optical transmittance 82.1% 4.57 eV. By using these as source drain electrodes, fully thin film transistors (TFTs) fabricated, they excellent performance. Furthermore, TFTs only 2.02% decrease field effect mobility after 1000 cycles repeated bending stress at radius curvature 3 mm.