Design and Fabrication of MOSFETs with a Reverse Embedded SiGe (Rev. e-SiGe) Structure
作者： Ricardo A. Donaton , Dureseti Chidambarrao , Jeff Johnson , Paul Chang , Yaocheng Liu
关键词: Materials science 、 Optoelectronics 、 Uniaxial tension 、 Relaxation (NMR) 、 Fabrication 、 Stress (mechanics) 、 Electronic engineering 、 Strain (chemistry) 、 MOSFET 、 Tensile strain 、 Strain engineering
摘要: A novel device structure containing a SiGe stressor is used to impose tensile strain in nMOSFET channel. 400MPa of uniaxial stress induced the Si channel through elastic relaxation/strain SiGe/Si bi-layer structure. This results 40% mobility enhancement and 15% drive current improvement for sub-60nm devices compared control with no strain.
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