Method for fabricating a semiconductor device having an epitaxial channel and transistor having same
作者： Alex K H See , Jinping Liu , Liang Choo Hsia , Mei Sheng Zhou
DOI:
关键词: Communication channel 、 Materials science 、 Electronic engineering 、 Optoelectronics 、 Substrate (electronics) 、 Relaxation (NMR) 、 Semiconductor device 、 Epitaxial material 、 Epitaxy 、 Transistor
摘要: A transistor having an epitaxial channel and a method for fabricating semiconductor device channel, the including forming hardmask on substrate opening in hardmask. The is geometrically characterized by long dimension short dimension, arranged predetermined manner relative to region of transistor. An material formed that induces strain regions proximate material. confined opening, such formed. fabricated proximity induced provides enhanced performance. By confining predefined substrate, plastic relaxation minimized maximum amount substrate.
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