Strained-channel Fin field effect transistor (FET) with a uniform channel thickness and separate gates
作者： Guy Moshe Cohen
DOI:
关键词: Gate dielectric 、 Communication channel 、 Electronic engineering 、 Metal gate 、 Semiconductor device 、 Fin field effect transistor 、 Gate oxide 、 Optoelectronics 、 Materials science
摘要: A semiconductor device (and method for making the same) includes a strained-silicon channel formed adjacent source and drain, first gate over side of channel, second dielectric between channel. The is non-planar.
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