Fabrication and analysis of deep submicron strained-Si n-MOSFET's

摘要: Deep submicron strained-Si n-MOSFETs were fabricated on strained Si/relaxed Si/sub 0.8/Ge/sub 0.2/ heterostructures. Epitaxial layer structures designed to yield well-matched channel doping profiles after processing, allowing comparison of and unstrained Si surface devices. In spite the high substrate vertical fields, MOSFET mobility devices is enhanced by 75% compared that unstrained-Si control state-of-the-art universal mobility. Although MOSFETs exhibit very similar short-channel effects, intrinsic transconductance roughly 60% for entire length range investigated (1 0.1 /spl mu/m) when self-heating reduced an ac measurement technique. Comparison measured hydrodynamic device simulations indicates in addition increased low-field mobility, improved high-field transport necessary explain observed performance improvement. Reduced carrier-phonon scattering electrons with average energies less than a few hundred meV accounts electron Si. Since provides enhancements through changes material properties rather geometry doping, promising candidate improving CMOS technology without compromising short effects.