Titanium silicide/germanide formation on submicron features for high mobility SiGe channel field effect transistors

摘要: The formation of self-aligned Ti(Si(1−x)Ge(x))2 on submicron lines is described. silicide/germanide formed by reacting sputtered Ti with epitaxially grown Si(1−x)Ge(x) composition and thickness relevant to high mobility channel field effect transistors. narrow was carried out phosphorous doped material, because the well known difficulties forming silicide heavily n-doped silicon. A companion set boron blanket films also processed. results show that process temperature required for minimization sheet resistance reduced as compared Si alone. However, agglomerate increased processing more easily than pure silicide. thermal stability degraded higher Ge content a strong function dopant type. Silicide/germanide layers x = 10% have line width dependence similar formation. Formation 27% display an inverse dependence, overall resistance. behaved