Strained dislocation-free channels for cmos and method of manufacture
作者： Dureseti Chidambarrao , Omer H. Dokumaci
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摘要: A semiconductor device and a method of manufacturing device. The includes channels for pFET (40) an nFET (45). An SiGe layer (45a) is grown in the channel Si:C (40a) channel. match lattice network underlying Si (15) to create stress component overlying epitaxial (60). In one implementation, this causes compressive tensile further both channels. level should be greater than approximately 3 GPa.
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