Semiconductor device channels
作者： Kelly L. Williams , David P. Paulsen , Douglas M. Dewanz , David H. Allen , E. Sheets Ii John
DOI:
关键词:
摘要: A semiconductor device and a method of manufacture are provided. The includes one or more layers having channels adapted to carry signals deliver power. may include at least two substantially equivalent cross-sectional area. Conductors in separate have different areas. spacer dielectric on side channel be included. establishing signal conductor layer including first second area, introducing the channel, area where is smaller than
lens.org 参考文章(55)
Alex K H See, Jinping Liu, Liang Choo Hsia, Mei Sheng Zhou, Method for fabricating a semiconductor device having an epitaxial channel and transistor having same ,(2011)
Suresh Venkatesan, Bradley P. Smith, Mohammed Rabiul Islam, Method for forming a dual inlaid copper interconnect structure ,(2001)
Dar-Shii Chou, Ching-Chung Ko, Tien-Yueh Liu, Tao Cheng, Peng-Cheng Kao, Power and ground routing of integrated circuit devices with improved ir drop and chip performance ,(2011)
Terry A. Spooner, Qinghuang Lin, Griselda Bonilla, Chih-Chao Yang, Adhesion enhancement for metal/dielectric interface ,(2006)
Satyanarayana V. Nitta, Shom Ponoth, Griselda Bonilla, Elbert E. Huang, Crenulated wiring structure and method for integrated circuit interconnects ,(2010)
Charles W. Koburger, Shom Ponoth, Chih-Chao Yang, David V. Horak, Size-filtered multimetal structures ,(2013)
Sani R. Nassif, Rani S. Abou Ghaida, Kanak B. Agarwal, Lars W. Liebmann, Multiple patterning layout decomposition for ease of conflict removal ,(2011)
Sani R. Nassif, Kanak B. Agarwal, Lars W. Liebmann, Split-layer design for double patterning lithography ,(2010)
Katrin Reiche, Ralf Richter, Torsten Huisinga, Kai Frohberg, Selective shrinkage of contact elements in a semiconductor device ,(2011)