Selective shrinkage of contact elements in a semiconductor device
作者： Katrin Reiche , Ralf Richter , Torsten Huisinga , Kai Frohberg
DOI:
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摘要: In sophisticated semiconductor devices, the contact elements connecting to active regions having formed thereabove closely spaced gate electrode structures may be provided on basis of a liner material so as reduce lateral width opening, while, other hand, non-critical non-reduced dimensions. To this end, at least first portion critical element is and with prior forming element.
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