Method for using a hardmask to form an opening in a semiconductor substrate
作者： Taeho Kook , Tungsheng Yang , Alvaro Maury , Kurt G. Steiner
DOI:
关键词: Conductive materials 、 Materials science 、 Dielectric layer 、 Engineering drawing 、 Semiconductor 、 Layer (electronics) 、 Optoelectronics
摘要: The present invention provides a method of forming opening in semiconductor dielectric layer. In an advantageous embodiment, the comprises steps hardmask layer on wherein has etch rate less than layer, guide through spacer within that reduces diameter and opening. may further include depositing conductive material over at least portion extends beyond opening, removing extend certain embodiments, contact be formed to width equal or 0.25 μm.
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