Method of etching an oxide layer
作者： Pamela S. Trammel , James E. Nulty
DOI:
关键词:
摘要: A method of etching an oxide layer is disclosed. First, a resist formed on substrate. Next, photosensitive the and patterned to expose regions be removed. The exposed may overlie nitride layer, structure such as polysilicon gate. etch performed that polymer deposits thus eliminating interactions between plasma. In this way, simple process allows for good control etch, resulting in reduced aspect ratio dependent effects, high oxide:nitride selectivity, wall angle profile control.
google.ca 参考文章(13)
Fred Roe, David S. Becker, Guy Blalock, Process for selectively etching a layer of silicon dioxide on an underlying stop layer of silicon nitride ,(1992)
Joseph M. Moran, David N. Wang, Nadia Lifshitz, High-selectivity plasma-assisted etching of resist- masked layer ,(1980)
James M. Cleeves, Zoilo C. H. Tan, James G. Heard, Plasma etching using a bilayer mask ,(1988)
Rhett B. Jucha, Thomas D. Bonifield, Vic B. Marriott, Monte A. Douglas, Contact etch method ,(1986)
Chris A. Spence, Scott A. MacDonald, Hubert Schlosser, Silylation of poly (t-BOC) styrene resists: performance and mechanisms Advances in Resist Technology and Processing VII. ,vol. 1262, pp. 344- 357 ,(1990) , 10.1117/12.20097
David Paul Favreau, John David Cuthbert, Integrated circuit process using a "hard mask" ,(1993)
Richard F. Reichelderfer, Marian C. Tang, Diane C. Vogel, Process and gas mixture for etching silicon dioxide and silicon nitride ,(1980)
Linda M. Ephrath, Reactive ion etching ,(1979)
William T. Cochran, Jenn L. Yeh, Agustin M. Garcia, Graham W. Hills, Semiconductor devices having multi-level metal interconnects ,(1988)
Yoshifumi Kawamoto, Tokuo Kure, Tsuyoshi Takaichi, Shinichi Tachi, Hiroshi Kawakami, Norikazu Hashimoto, Gas for selectively etching silicon nitride and process for selectively etching silicon nitride with the gas ,(1984)