作者: Yoshifumi Kawamoto , Tokuo Kure , Tsuyoshi Takaichi , Shinichi Tachi , Hiroshi Kawakami
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摘要: A dry-etching gas suitable for selective etching of silicon nitride and a process selectively with the are disclosed. Silicon can be dry-etched higher selectivity or at rate than dioxide silicon, fabricating semi-conductor devices simplified novel structure realized.