Gas for selectively etching silicon nitride and process for selectively etching silicon nitride with the gas

作者: Yoshifumi Kawamoto , Tokuo Kure , Tsuyoshi Takaichi , Shinichi Tachi , Hiroshi Kawakami

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摘要: A dry-etching gas suitable for selective etching of silicon nitride and a process selectively with the are disclosed. Silicon can be dry-etched higher selectivity or at rate than dioxide silicon, fabricating semi-conductor devices simplified novel structure realized.

参考文章(4)
Rudolf August Herbert Heinecke, Selective plasma etching and deposition ,(1974)
William R. Harshbarger, Roy A. Porter, Thomas N. Fogarty, Fabrication of patterned silicon nitride insulating layers having gently sloping sidewalls ,(1978)
Teizo Kotani, Kozo Arai, Kenji Yanagihara, Etching method by plasma chemical reaction ,(1981)
Takahiko Moriya, Hitoshi Ito, Method for producing semiconductor device ,(1986)