Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of (CH3F or CH2F2) and CF4 and O2
作者： Walter Merry , Jitske Trevor , Gladys D. Quinones , Ajey M. Joshi , Cynthia B. Brooks
DOI:
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摘要: A chemical downstream etching (CDE) that is selective to silicon nitrides (SiN) over silicon oxides (SiO) uses at least one of a CH 3 F/CF 4 /O 2 recipe and F /CF recipe. Inflow rates are mapped for the respective components the input recipe find settings provide both high nitride etch and high selectivity towards SiN material. pins-up scheme is used for simultaneously stripping away backside with topside nitride.
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