Structure and method for FinFET device with asymmetric contact

摘要: The present disclosure provides one embodiment of a method forming an integrated circuit structure. includes shallow trench isolation (STI) structure in semiconductor substrate first material, thereby defining plurality fin-type active regions separated from each other by the STI structure; gate stacks on regions; inter-layer dielectric (ILD) layer filling gaps between stacks; patterning ILD to form adjacent two depositing material that is conformal trench; with second layer; contact opening; and conductive opening feature.