X‐ray photoemission spectroscopy studies of cesium and oxygen on GaAs(100)

摘要: We have studied the interface formation of Cs on an As rich GaAs(100) surface and subsequent oxidation cesiated using x‐ray photoemission spectroscopy at room temperature. Several aspects this are in sharp contrast to nonreacting Cs/GaAs(110) interface. found that disrupted caused segregate. Unlike one monolayer (ML) saturation coverage for temperature, no Cs/GaAs(100) could be found. Further exposure oxygen seemed resurface atoms originally buried under segregated As. The work function reduction was 3.1 eV 3.0 ML, increased by 0.45 after 100 L oxygen, unlike decrease GaAs(110). A feature conduction band electronic states GaAs, which is below vacuum level a clean surface, observed appear secondary electron spectrum during process cesiation.