作者: Naoshi Takahashi , Shin-ichiro Tanaka , Masatake Ichikawa , Yong Q. Cai , Masao Kamada
DOI: 10.1143/JPSJ.66.2798
关键词:
摘要: The electronic states of O/Cs/GaAs(100) have been investigated by using ultraviolet photoelectron spectroscopy in order to understand the initial coadsorption kinetics on way negative electron affinity formation. It was found that energy positions Ga-3d and As-3d peaks shift lower binding side first Cs deposition, while they higher during n-th deposition ( n≧3). also besides appearance oxidized As, width peak becomes larger oxygen exposure. In case exposure, all work function made parallel shifts energy, which can be well interpreted terms change band bending. These results indicate classified into two stages: At both Ga As react with O, resulting rearrangement surface layers, whil...