Elementary scattering theory of the Si MOSFET
作者： M. Lundstrom
DOI: 10.1109/55.596937
关键词: Channel length modulation 、 Short-channel effect 、 Threshold voltage 、 MOSFET 、 Bipolar junction transistor 、 Electrical engineering 、 Computational physics 、 Physics 、 Scattering theory 、 Transconductance 、 Electric field
摘要: … of MOSFET’s … MOSFET and the bipolar transistor (and the particular importance of the source to channel barrier) is well known [5], [6] but is frequently ignored in contemporary MOSFET …
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