Microwave transistor modeling
作者： G. Crupi , A. Raffo , G. Avolio , A. Caddemi , D.M.M.-P. Schreurs
DOI: 10.1016/B978-0-12-803894-9.00001-9
关键词: High-electron-mobility transistor 、 Mobile telephony 、 Optical transistor 、 Component (UML) 、 Transistor 、 Engineering 、 Multiple-emitter transistor 、 Wireless 、 Field-effect transistor 、 Electrical engineering 、 Electronic engineering
摘要: The first chapter is meant to give a comprehensive overview of the fundamentals, state-of-the-art, challenges, and future trends in field high-frequency transistor modeling. Linear, as well noise nonlinear operations, are dealt with. importance microwave modeling comes from fact that key component circuits at heart modern wireless communication systems, such mobile telephony. We currently witnessing proliferation applications continuous progress technologies make hot topic great interest.
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