Correlation between luminescence and structural properties of Si nanocrystals
作者： Fabio Iacona , Giorgia Franzò , Corrado Spinella
DOI: 10.1063/1.372013
关键词: Order of magnitude 、 Silicon oxide 、 Luminescence 、 Silicon 、 Materials science 、 Plasma-enhanced chemical vapor deposition 、 Photoluminescence 、 Annealing (metallurgy) 、 Analytical chemistry 、 Thin film
摘要: … PL intensity increases with increasing the Si content; at 1200C the light emission from sample S4 42 at.% Si becomes the highest due to the saturation of the PL … Si content, S2 37 at. % …
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