Deposition of ultra thin CuInS2 absorber layers by ALD for thin film solar cells at low temperature (down to 150 ?C)

摘要: Two new processes for the atomic layer deposition of copper indium sulfide (CuInS2) based on use two different sets precursors are reported. Metal chloride (CuCl, InCl3) in combination with H2S imply relatively high temperature (Tdep?=?380 ?C), and due to exchange reactions, CuInS2 stoechiometry was only achieved by depositing In2S3 layers a CuxS film. However, acac- metal (Cu(acac)2, In(acac)3) allows direct at as low 150 ?C, involving situ copper-reduction, reaction diffusion processes. The morphology, crystallographic structure, chemical composition optical band gap thin films were investigated using scanning electronic microscope, x-ray diffraction under grazing incidence conditions, fluorescence, energy dispersive spectrometry, secondary ion mass photoelectron spectroscopy UV?vis spectroscopy. Films implemented ultra-thin absorbers typical CIS-solar cell architecture allowed conversion efficiencies up 2.8%.