Innovative front end processing for next generation CIS module production
作者： Volker Probst , Axel Jasenek , Christian Sandfort , Andreas Letsch , Immo Koetschau
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摘要: The successful implementation of two new process steps into an existing Cu(In,Ga)(Se,S)2 (CIS) production line was achieved. One, a newly developed back contact, aims for better control, as far the transition metallic contact to selenide/metal bi-layer during CIS-formation is concerned. This done by introduction corrosion resistant barrier layer, which reliably stops chalcogenide diffusion from top. By doing so, layer obtained, with well defined properties in functionalities electrode now divided between separated layers. other development presented this paper, tackles complexity CIS-module and interferences different processes required. shifting P1-scribing after i-ZnO deposition, sequence CIS simplified it will be shown that P1i exhibits superior morphology groove quality
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