Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures
作者： M. Simma , G. Bauer , G. Springholz
DOI: 10.1063/1.4759145
关键词: Quantum dot 、 Band gap 、 Quasi Fermi level 、 Quantum well 、 Condensed matter physics 、 Materials science 、 Heterojunction 、 Semimetal 、 Molecular beam epitaxy 、 Direct and indirect band gaps
摘要: The band offsets of PbSe/Pb1−xEuxSe multi-quantum wells grown by molecular beam epitaxy are determined as a function temperature and europium content using temperature-modulated differential transmission spectroscopy. confined quantum well states in the valence conduction bands analyzed k·p model with envelope approximation. From fit experimental data, normalized offset is 0.45±0.15 gap difference, independently Eu up to 14% from 20 300 K.
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