Influence of Si doping on optical properties of wurtzite GaN
作者： A Ferreira da Silva , C Moysés Araújo , Bo E Sernelius , C Persson , R Ahuja
DOI: 10.1088/0953-8984/13/40/303
关键词: Electronic band structure 、 Drude model 、 Wide-bandgap semiconductor 、 Electrical resistivity and conductivity 、 Materials science 、 Photoluminescence 、 Band gap 、 Condensed matter physics 、 Impurity 、 Wurtzite crystal structure
摘要: … have used the ionization energy EI = 35 meV and the electron effective mass md = 0.20m0. … We characterize the band dispersion with the density-of-states effective mass. Thus we …
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