Diffuse interface in Si (substrate)‐Au (evaporated film) system
作者： T. Narusawa , S. Komiya , A. Hiraki
DOI: 10.1063/1.1654685
关键词: Silicon 、 Auger electron spectroscopy 、 Surface energy 、 Analytical chemistry 、 Phase (matter) 、 Monolayer 、 Substrate (electronics) 、 Materials science 、 Eutectic system 、 Alloy 、 Physics and Astronomy (miscellaneous)
摘要: When a gold film is vacuum evaporated at around 50 °C onto clean surface of single‐crystal silicon substrate, the adhesion to substrate very strong, which suggests that some chemical reaction has taken place interface. Present study by Auger electron spectroscopy (AES) concludes occurrence above induces diffuse interface region in order relax (or minimize) energy. For relaxation (110) and (111) interfaces, least 45 20 monolayers are necessary, respectively. The phase thus‐formed concluded be similar nonequilibrium solid alloy obtained quenching from Si–Au eutectic liquid.
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