Efficient high-deposition-rate all-hot-wire hydrogenated amorphous silicon n-i-p solar cells
作者： Qi Wang , E. Iwaniczko , Yueqin Xu , B.P. Nelson , A.H. Mahan
关键词: Hydrogen 、 Chemical vapor deposition 、 Amorphous silicon 、 Doping 、 Analytical chemistry 、 Layer (electronics) 、 Materials science 、 Silicon 、 Substrate (electronics) 、 Solar cell
摘要: Efficient all-hot-wire chemical vapor deposition (HWCVD) hydrogenated amorphous silicon (a-Si:H) n-i-p solar cells have been demonstrated. Using HWCVD, we made the intrinsic layer deposited at 17-20 /spl Aring//s and doped layers 5-10 Aring//s. An initial efficiency of 7.1% a stable 5.4% after 1000 hours 1-sun light-soaking achieved on untextured stainless-steel (SS) substrate. This improvement results primarily from incorporating into p/i interface about 60 Aring/ on-the-edge a-Si:H material grown just below condition that would lead to transition microcrystallinity. We also optimize p-layers in by varying p-layer thickness, substrate temperature, trimethylboron gas flow rate, chamber pressure. The cell's fill factor increases 0.60 0.68, open-circuit voltage 0.86 0.88 V. Recently, improved light-trapping depositing cell textured Ag/ZnO-coated SS supplied Uni-Solar, obtained an all-HWCVD record 8.7%.
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