Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same
作者： Bedau Daniel , Stewart Derek , Kalitsov Alan , Bertero Gerardo
DOI:
关键词: Materials science 、 Band gap 、 Optoelectronics 、 Electrical conductor 、 Semiconductor materials 、 Monolayer 、 Charge carrier 、 Electrode 、 Layer (electronics) 、 Ferroelectricity
摘要: A ferroelectric memory device contains a two-dimensional semiconductor material layer having band gap of at least 1.1 eV and one thickness 1 to 5 monolayers atoms the or includes charge carrier gas layer, source contact contacting first portion drain second element located between contacts adjacent surface conductive gate electrode element.
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