Ferroelectric memory device and fabrication method thereof
作者： Voon Yew Thean , Jan Van Houdt
DOI:
关键词:
摘要: The disclosed technology generally relates to semiconductor devices, and more particularly a non-volatile ferroelectric memory device methods of fabricating the same. In one aspect, includes high dielectric constant layer (high-k) or metal on substrate. additionally two-dimensional (2D) channel interposed between high-k layer. gate layer, further source region drain each electrically coupled 2D
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