Semiconductor device having a ferroelectric memory and manufacturing method thereof
作者： Yamaguchi Tadashi
DOI:
关键词:
摘要: In a ferroelectric memory having film between gate electrode and semiconductor substrate, dielectric breakdown of insulating is prevented the polarization performance enhanced to improve device. cell including field effect transistor control formed over main surface paraelectric are by being stacked in this order substrate.
lens.org 参考文章(5)
Dina H. Triyoso, Joachim Metzger, Johannes Mueller, Robert Binder, Patrick Polakowski, Semiconductor device with ferooelectric hafnium oxide and method for forming semiconductor device ,(2014)
Peter Baars, Carsten Grass, Methods of forming a semiconductor circuit element and semiconductor circuit element ,(2015)
Voon Yew Thean, Jan Van Houdt, Ferroelectric memory device and fabrication method thereof ,(2016)
Mueller-Meskamp Lars, Duenkel Stefan, Engineering of ferroelectric materials in semiconductor devices by surface potential modulation ,(2019)
Ralf Illgen, Stefan Flachowsky, SEMICONDUCTOR DEVICE AND METHOD ,(2017)