Ferroelectric polymer-gated graphene memory with high speed conductivity modulation.
作者： Hyeon Jun Hwang , Jin Ho Yang , Young Gon Lee , Chunhum Cho , Chang Goo Kang
DOI: 10.1088/0957-4484/24/17/175202
关键词: Stack (abstract data type) 、 Materials science 、 Polymer 、 Conductivity modulation 、 Conductivity 、 Optoelectronics 、 Graphene 、 Ferroelectricity 、 Bit line
摘要: The feasibility of a high speed ferroelectric graphene memory device using polymer (PVDF–TrFE)/graphene stack has been demonstrated. conductivity this metal–ferroelectric–graphene (MFG) could be modulated up to 775% with very fast programming down 10 ns. Also, programmed states were maintained 1000 s endurance over cycles. In addition demonstrating single device, the array-level integration and cell write/read functionality 4 × MFG array adopting bit line also confirmed show memory.
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