Sensitivity improvement of graphene/Al2O3/PVDF–TrFE stacked touch device through Al seed assisted dielectric scaling

作者: J.H. Yang , H.J. Hwang , S.C. Kang , B.H. Lee

DOI: 10.1016/J.MEE.2015.04.039

关键词: CouplingStack (abstract data type)Deposition (law)ScalingGrapheneDielectricOptoelectronicsPiezoelectricitySensitivity (control systems)Materials scienceNanotechnology

摘要: Display Omitted The sensitivity of graphene based touch sensor has been improved by Al2O3 scaling.Al assisted deposition is an easy way to get smooth and thin dielectric.The piezoelectric induced charges were increased enhancing the charge coupling.7 times higher could be achieved. using polymer/graphene stack drastically scaling thickness dielectric on graphene. effect in channel from 0.6195 4.314µC/cm2 at 1kg press weight, which coupling between PVDF-TrFE through 30nm 5nm.

参考文章(31)
Hyeon Jun Hwang, Jin Ho Yang, Young Gon Lee, Chunhum Cho, Chang Goo Kang, Soo Cheol Kang, Woojin Park, Byoung Hun Lee, Ferroelectric polymer-gated graphene memory with high speed conductivity modulation. Nanotechnology. ,vol. 24, pp. 175202- ,(2013) , 10.1088/0957-4484/24/17/175202
Yukio Sakashita, Toshiyuki Ono, Hideo Segawa, Kouji Tominaga, Masaru Okada, Preparation and electrical properties of MOCVD‐deposited PZT thin films Journal of Applied Physics. ,vol. 69, pp. 8352- 8357 ,(1991) , 10.1063/1.347397
Ravinder S. Dahiya, Giorgio Metta, Maurizio Valle, Andrea Adami, Leandro Lorenzelli, Piezoelectric oxide semiconductor field effect transistor touch sensing devices Applied Physics Letters. ,vol. 95, pp. 034105- ,(2009) , 10.1063/1.3184579
Darren J. Lipomi, Michael Vosgueritchian, Benjamin C-K. Tee, Sondra L. Hellstrom, Jennifer A. Lee, Courtney H. Fox, Zhenan Bao, Skin-like pressure and strain sensors based on transparent elastic films of carbon nanotubes Nature Nanotechnology. ,vol. 6, pp. 788- 792 ,(2011) , 10.1038/NNANO.2011.184
Yi Zheng, Guang-Xin Ni, Chee-Tat Toh, Chin-Yaw Tan, Kui Yao, Barbaros Özyilmaz, Graphene field-effect transistors with ferroelectric gating. Physical Review Letters. ,vol. 105, pp. 166602- ,(2010) , 10.1103/PHYSREVLETT.105.166602
K. Zou, X. Hong, J. Zhu, C. H. Ahn, A. Posadas, J. Hoffman, Unusual Resistance Hysteresis in n-Layer Graphene Field Effect Transistors Fabricated on Ferroelectric Pb(Zr_0.2Ti_0.8)O_3 arXiv: Mesoscale and Nanoscale Physics. ,(2010) , 10.1063/1.3467450
Santosh Raghavan, Igor Stolichnov, Nava Setter, Jean-Savin Heron, Mahmut Tosun, Andras Kis, Long-term retention in organic ferroelectric-graphene memories Applied Physics Letters. ,vol. 100, pp. 023507- ,(2012) , 10.1063/1.3676055
Yong-Joo Doh, Gyu-Chul Yi, Nonvolatile memory devices based on few-layer graphene films Nanotechnology. ,vol. 21, pp. 105204- 105204 ,(2010) , 10.1088/0957-4484/21/10/105204
Yi Zheng, Guang-Xin Ni, Chee-Tat Toh, Ming-Gang Zeng, Shu-Ting Chen, Kui Yao, Barbaros Özyilmaz, Gate-controlled non-volatile graphene-ferroelectric memory arXiv: Mesoscale and Nanoscale Physics. ,(2009) , 10.1063/1.3119215
Yi Zheng, Guang-Xin Ni, Sukang Bae, Chun-Xiao Cong, Orhan Kahya, Chee-Tat Toh, Hye Ri Kim, Danho Im, Ting Yu, Jong Hyun Ahn, Byung Hee Hong, Barbaros Özyilmaz, Wafer-scale graphene/ferroelectric hybrid devices for low-voltage electronics EPL. ,vol. 93, pp. 17002- ,(2011) , 10.1209/0295-5075/93/17002