Calculation of Some Characteristics of an Intrinsic Random Field in Hydrogenated Amorphous Silicon
作者： N. M. Khamidullina
关键词: Random field 、 Radial distribution function 、 Condensed matter physics 、 Basis (linear algebra) 、 Amorphous silicon 、 Density of states 、 Materials science 、 Electronic, Optical and Magnetic Materials
摘要: A calculation is presented of some characteristics an intrinsic random field in a-Si:H needed to interpret statistical and transport properties this disordered heteropolar material. Numerical results are obtained for the characteristic energies related density states optical tails, etc. The a satisfactory agreement with experimental data available. On basis estimated atomic radial distribution function parameters problem medium-range order a-Si: H discussed. [Russian Text Ignored].
harvard.edu
sci-hub.se 参考文章(15)
Hellmut Fritzsche, What are Non-Crystalline Semiconductors Springer, Berlin, Heidelberg. pp. 1- 13 ,(1981) , 10.1007/978-3-642-81604-8_1
J. A. Reimer, R. W. Vaughan, J. C. Knights, Proton Magnetic Resonance Spectra of Plasma-Deposited Amorphous Si: H Films Physical Review Letters. ,vol. 44, pp. 193- 196 ,(1980) , 10.1103/PHYSREVLETT.44.193
S. C. Moss, J. F. Graczyk, Evidence of Voids Within the As-Deposited Structure of Glassy Silicon Physical Review Letters. ,vol. 23, pp. 1167- 1171 ,(1969) , 10.1103/PHYSREVLETT.23.1167
J.I Pankove, Fred H Pollak, C Schnabolk, Optical absorption by GAP states in hydrogenated amorphous silicon Journal of Non-crystalline Solids. pp. 459- 462 ,(1980) , 10.1016/0022-3093(80)90637-7
E. C. Freeman, William Paul, Infrared vibrational spectra of rf-sputtered hydrogenated amorphous silicon Physical Review B. ,vol. 18, pp. 4288- 4300 ,(1978) , 10.1103/PHYSREVB.18.4288
N F Mott, States in the gap in non-crystalline semiconductors Journal of Physics C: Solid State Physics. ,vol. 13, pp. 5433- 5471 ,(1980) , 10.1088/0022-3719/13/30/011
Richard Zallen, Symmetry and Reststrahlen in Elemental Crystals Physical Review. ,vol. 173, pp. 824- 832 ,(1968) , 10.1103/PHYSREV.173.824
J.C. Knights, Growth morphology and defects in plasma-deposited a-Si:H films Journal of Non-crystalline Solids. pp. 159- 170 ,(1980) , 10.1016/0022-3093(80)90589-X
M. V. Coleman, D. J. D. Thomas, The Structure of Amorphous Silicon Films physica status solidi (b). ,vol. 24, pp. K111- K115 ,(1967) , 10.1002/PSSB.19670240241
R. Grigorovici, R. Mǎnǎilǎ, Structural model for amorphous germanium layers Thin Solid Films. ,vol. 1, pp. 343- 352 ,(1968) , 10.1016/0040-6090(68)90024-2