作者: Zhang Yunsen
DOI:
关键词: Ion 、 Irradiation 、 Sputtering 、 Magnetoresistive random-access memory 、 Materials science 、 Electrode 、 Tunnel magnetoresistance 、 Surface roughness 、 Optoelectronics 、 Flattening
摘要: The invention provides a method for flattening magnetic tunnel junction bottom electrode by gas cluster ion beams. beams are used to flatten the electrode, so that average surface roughness of reaches requirement deposing film. Due transverse sputtering effect low-energy beams, local unevenness can be eliminated effectively, optimal is obtained changing incident dosage, irradiation angel and/or adding organic alcohol, acid or aldehyde and like, filming quality magnetic/electrical performance improved, yield rate an MRAM loop improved; GCIB PVD canbe integrated into one system, technical complexity reduced, pollution caused addition CMP post cleaning technology avoided, especially suitable large-scale production MRAM.