Method for making a magnetic random access memory element with small dimension and high quality

摘要: This invention is about a method to make an MRAM element with small dimension, by building MTJ as close possible associated via connecting circuitry in semiconductor wafer. The provides process scheme flatten the interface of bottom electrode during film deposition, which ensures good deposition atomically smooth multilayer otherwise might be rough. flattening first deposit thin amorphous conducting layer middle BE and immediately bombard low energy ions provide kinetic for surface atom diffusion move from high point kinks. With such scheme, not only can made extremely small, but its device performance magnetic stability also greatly improved.