Bottom conductor for integrated MRAM
作者： Wei Cao , Cheng Horng , Chen-Jung Chien , Chyu-Jiuh Torng , Ruying Tong
DOI:
关键词: Materials science 、 Optoelectronics 、 CMOS 、 Tantalum 、 Electrical engineering 、 Dielectric 、 Integrated circuit 、 Magnetoresistive random-access memory 、 Conductor
摘要: A structure that is well suited to connecting an MTJ device a CMOS integrated circuit described. It built out of three layers. The bottom layer serves as seed for the center layer, which alpha tantalum, while third, topmost, selected its smoothness, compatibility with inter-layer dielectric materials, and ability protect underlying tantalum. method formation also
lens.org 参考文章(10)
Xizeng Shi, Hugh C. Hiner, Kyusik Sin, α-tantalum lead for use with magnetic tunneling junctions ,(2002)
Stuart S. P. Parkin, Mahesh G. Samant, Magnetic random access memory with thermally stable magnetic tunnel junction cells ,(2001)
Xiaoyi Chen, Chentsau Ying, Ajay Kumar, Chun Yan, Method of fabricating a magneto-resistive random access memory (MRAM) device ,(2003)
Mao-Min Chen, Min Li, Ru-Ying Tong, Liubo Hong, Cheng T. Horng, Novel structure and method to fabricate high performance MTJ devices for MRAM applications ,(2005)
Mao-Min Chen, Ru-Ying Tong, Liubo Hong, Cheng T. Horng, Oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM ,(2004)
Liubo Hong, Mao Min Chen, Ru-Ying Tong, Cheng T. Horng, A novel underlayer for high performance magnetic tunneling junction MRAM ,(2009)
Xizeng Shi, Hugh Craig Hiner, Kyusik Sin, Magnetic tunnel junction MRAM with improved stability ,(2001)
Gloria Kerszykowski, Saied N. Tehrani, Kelly Wayne Kyler, Mark Durlam, Mark DeHerrera, Eugene Youjun Chen, Method of fabricating a magnetic element with insulating veils ,(2003)
Ru-Ying Tong, Cheng T. Horng, Bottom electrode for making a magnetic tunneling junction (MTJ) ,(2003)
Werner Steinhögl, Martin Traving, Günther Schindler, Manfred Engelhardt, Gernot Steinlesherger, Nanoscale diffusion barriers for copper metallization Semiconductor international. ,vol. 26, pp. 73- 78 ,(2003)