Integrated circuits including magnetic tunnel junctions for magnetoresistive random-access memory and methods for fabricating the same
作者： Ming He , Hyun-jin Cho , Craig Child , Seowoo Nam
DOI:
关键词: Electrode 、 Integrated circuit 、 Perpendicular 、 Tunnel magnetoresistance 、 Electrical engineering 、 Materials science 、 Optoelectronics 、 Electrical conductor 、 Stack (abstract data type) 、 Magnetoresistance 、 Magnetoresistive random-access memory
摘要: Integrated circuits that include a magnetic tunnel junction (MTJ) for magnetoresistive random-access memory (MRAM) and methods fabricating such integrated are provided. In one example, method an circuit includes forming lower electrode on metal interconnect. The interconnect is disposed above semiconductor substrate aligned with normal axis substantially perpendicular to the substrate. conductive plug. A MTJ stack formed axis.
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