Novel structure and method to fabricate high performance MTJ devices for MRAM applications
作者： Mao-Min Chen , Min Li , Ru-Ying Tong , Liubo Hong , Cheng T. Horng
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摘要: A high performance MTJ in an MRAM array is disclosed which the bottom conductor has amorphous Ta capping layer. key feature a surfactant layer comprised of oxygen that formed on surface. The resulting smooth and flat promotes surface layers are subsequently For 0.3×0.6 micron bit size, 35 to 40 Angstrom thick NiFe(18%) free layer, AlOx barrier generated from ROX oxidation 9 10 Al Ru/Ta/Ru employed give dR/R >40% RA about 4000 ohm-μm2. configuraton extendable 0.2×0.4 size.
lens.org 参考文章(12)
Thomas Anthony, Simplified magnetic memory cell ,(2003)
Joel A. Drewes, Donald L. Yates, Method of improving surface planarity prior to MRAM bit material deposition ,(2002)
Yu-Hsia Chen, Liubo Hong, Ru-Ying Tong, Cheng T. Horng, A method of forming a magnetic tunneling junction (mtj) mram device and a tunneling magnetoresistive (tmr) read head ,(2004)
Xiu-Feng Han, Mikihiko Oogane, Hitoshi Kubota, Yasuo Ando, Terunobu Miyazaki, Fabrication of high-magnetoresistance tunnel junctions using Co75Fe25 ferromagnetic electrodes Applied Physics Letters. ,vol. 77, pp. 283- 285 ,(2000) , 10.1063/1.126951
Min Li, Ru-Ying Tong, Liubo Hong, Cheng T. Horng, A novel capping structure for enhancing dR/R of the MTJ device ,(2005)
Srinivas V. Pietambaram, Renu W. Dave, Jon M. Slaughter, Amorphous alloys for magnetic devices ,(2003)
W. F. Egelhoff, P. J. Chen, C. J. Powell, M. D. Stiles, R. D. McMichael, J. H. Judy, K. Takano, A. E. Berkowitz, OXYGEN AS A SURFACTANT IN THE GROWTH OF GIANT MAGNETORESISTANCE SPIN VALVES Journal of Applied Physics. ,vol. 82, pp. 6142- 6151 ,(1997) , 10.1063/1.365620
S. Tehrani, J.M. Slaughter, E. Chen, M. Durlam, J. Shi, M. DeHerren, Progress and outlook for MRAM technology ieee international magnetics conference. ,vol. 35, pp. 2814- 2819 ,(1999) , 10.1109/20.800991
Mao-Min Chen, Ru-Ying Tong, Liubo Hong, Cheng T. Horng, Oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM ,(2004)
Eric Shane Linville, Zheng Gao, Sining Mao, Janusz Jozef Nowak, Brian William Karr, Olle Gunnar Heinonen, Structure to achieve sensitivity and linear density in tunneling GMR heads using orthogonal magnetic alignments ,(2002)