SyAF structure to fabricate Mbit MTJ MRAM

摘要: A MTJ that minimizes error count (EC) while achieving high MR value, low magnetostriction, and a RA of about 1100 Ω-μm 2 for 1 Mbit MRAM devices is disclosed. The has composite AP1 pinned layer made lower amorphous Co 60 Fe 20 B an upper crystalline 75 25 to promote smoother more uniform AlOx tunnel barrier. “stronger oxidation” state realized in the by depositing thicker than normal Al or extending ROX cycle time oxidation thereby reduces tunneling hot spots. NiFe free content 8 21 atomic % Hf NiFeHf capping from 10 %. Ta hard mask formed on layer. EC (best) reduced >100 ppm <10 using preferred configuration.