GMR sensor having an under-layer treated with nitrogen for increased magnetoresistance
作者： Brian R. York , Wen-yaung Lee , Dulip Ajantha Welipitiya , Thomas E. Shatz
DOI:
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摘要: A tunnel junction TMR magnetoresistive sensor formed on layers having nitrogen interspersed therein. The nitrogenation of the which is deposited allows to have very smooth, uniform surfaces. This greatly improves performance by, for example, providing a barrier layer thickness.
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